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| FDD6635 35V N-Channel PowerTrench(R) MOSFET February 2007 FDD6635 35V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. tm Features * 59 A, 35 V RDS(ON) = 10 m @ VGS = 10 V RDS(ON) = 13 m @ VGS = 4.5 V * Fast Switching * RoHS compliant Applications * Inverter * Power Supplies D D G S G D-PAK TO-252 (TO-252) TA=25 C unless otherwise noted o S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) VGSS ID Drain-Source Voltage Parameter Drain-Source Avalanche Voltage (maximum) Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 4) Ratings 35 40 20 59 15 100 113 55 3.8 1.6 -55 to +150 Units V V V A EAS PD Single Pulse Avalanche Energy Power Dissipation @TC=25C @TA=25C @TA=25C (Note 5) (Note 3) (Note 1a) (Note 1b) mJ W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.7 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6635 Device FDD6635 Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min Typ 35 32 Max Units V mV/C 1 100 A nA Off Characteristics(Note 2) ID = 250 A, Referenced to 25C VDS = 28 V, VGS = 20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, ID = 15 A ID = 13 A ID = 15 A, TJ=125C ID = 15 A 1 1.9 -5 8.2 10.2 12.4 53 3 V mV/C 10 13 16 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 20 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 1400 317 137 1.4 pF pF pF f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg (TOT) Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 11 VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 6 28 14 26 VDS = 20 V, ID = 15 A 13 3.9 5.3 20 12 45 25 36 18 ns ns ns ns nC nC nC nC Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Charge Gate-Drain Charge FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol VSD trr Qrr TA = 25C unless otherwise noted Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Test Conditions VGS = 0 V, IF = 15 A, IS = 15 A Min Typ 0.8 26 16 Max Units 1.2 V ns nC Drain-Source Diode Characteristics (Note 2) diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. 5. Starting TJ = 25C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Typical Characteristics 80 2.4 VGS=10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 4.5V 6.0V 2.2 2 VGS = 3.5V 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 4.0V 4.5V 5.0V 6.0V 10V 3.0V 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.029 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 15A VGS = 10V ID = 7.5A 0.025 0.021 TA = 125oC 0.017 0.013 TA = 25oC 0.009 0.005 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 80 70 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA =-55oC ID, DRAIN CURRENT (A) 60 25oC VGS = 0V 10 TA = 125oC 125oC 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Typical Characteristics 10 2000 ID = 15A VDS = 10V 15V f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) 8 20V 6 1600 CAPACITANCE (pF) CISS 1200 4 800 COSS 2 400 CRSS 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100 1ms 10 10s 1 DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 1s 10ms 100ms 100s 80 SINGLE PULSE RJA = 96C/W TA = 25C 60 40 0.1 20 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1000 I(AS), AVALANCHE CURRENT (A) 100 I(pk), PEAK TRANSIENT CURRENT (A) SINGLE PULSE RJA = 96 /W TA = 25 80 TJ = 25 C o 100 60 40 10 20 0 0.1 1 10 t1, TIME (sec) 100 1000 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Typical Characteristics 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.0 RJA(t) = r(t) * RJA RJA = 96 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6635 Rev. C2(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench(R) MOSFET Test Circuits and Waveforms VDS VGS RGEN 0V L BVDSS tP + VDD DUT IAS VDS VDD tp VGS IAS 0.01 vary tP to obtain required peak IAS tAV Figure 14. Unclamped Inductive Load Test Circuit Drain Current Regulator Same type as DUT Figure 15. Unclamped Inductive Waveforms + 10V 50k 10F 1F 10V + VDD QG QGS QGD - VGS VGS DUT - Ig(REF) Charge, (nC) Figure 16. Gate Charge Test Circuit RL Figure 17. Gate Charge Waveform VDS VGS RGEN VGS tON td(ON) tOFF td(OFF) tr tf 90% + DUT VDD VDS 90% Pulse Width 1s Duty Cycle 0.1% 0V 10% 90% 50% 0V 10% 50% 10% VGS Pulse Width Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms FDD6635 Rev. C2(W) www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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